The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Apr. 28, 2023
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Sichuan, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Technology Development Co., Ltd., Beijing, CN;

Inventors:

Wenzhe Cai, Beijing, CN;

Jia Liu, Beijing, CN;

Cong Fan, Beijing, CN;

Rong Wang, Beijing, CN;

Yao Huang, Beijing, CN;

Xiangdan Dong, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01);
U.S. Cl.
CPC ...
G09G 3/20 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/08 (2013.01);
Abstract

A scan circuit is provided. The scan circuit includes a plurality of scan units. A respective scan unit of the plurality of scan units includes a plurality of transistors. A respective gate electrode of a respective transistor of the plurality of transistors includes a first portion and a second portion in different layers. First portions of respective gate electrodes of the plurality of transistors in the respective scan unit are configured to be provided with a power supply signal. Second portions of the respective gate electrodes of the plurality of transistors in the respective scan unit are configured to be provided with gate scanning signals, respectively. First portions of gate electrodes of at least two transistors in the respective scan unit are parts of a unitary structure.


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