The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 06, 2023
Honda Motor Co., Ltd., Tokyo, JP;
Xufan Li, Fremont, CA (US);
Avetik Harutyunyan, Santa Clara, CA (US);
Honda Motor Co., Ltd., Tokyo, JP;
Abstract
The present disclosure generally relates to processes for forming a two-dimensional single atomic layer transition metal dichalcogenide (TMD). The present disclosure also generally relates to a two-dimensional single atomic layer TMD formed by the process. In an embodiment, a process for forming a continuous TMD film is provided. The process includes flowing a carrier gas into a processing volume of a processing chamber having a substrate positioned therein; heating an alkali metal salt, a transition metal oxide, and a chalcogenide to form reactive species; and exposing the substrate to the reactive species to form a continuous TMD film, wherein: the continuous TMD film comprises crystals having an average grain size of about 50 μm to about 500 μm; the crystals of the continuous TMD film are aligned in the same crystallographic orientation; and the continuous TMD film consists of a single atomic layer of transition metal dichalcogenide.