The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 13, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Nicolas Louis Breil, San Jose, CA (US);
Yi-Chiau Huang, Fremont, CA (US);
Jesus Avila Avendano, Dallas, TX (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A method of forming an oxidation barrier layer in a semiconductor structure includes forming a contact layer on an exposed surface of a semiconductor region of a semiconductor structure in a first processing chamber, wherein the semiconductor region comprises silicon germanium doped with p-type dopants and the contact layer comprises silicon germanium (SiGe) with a ratio of germanium (Ge) ranging between 60% and 100%, and forming an oxidation barrier layer comprising gallium (Ga) on the contact layer, by applying gallium (Ga)-containing liquid precursor to a surface of the contact layer in the first processing chamber.