The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jun. 16, 2021
Applicant:

Saint-gobain Glass France, Courbevoie, FR;

Inventors:

Corentin Monmeyran, Paris, FR;

Julie Ruff, Aachen, DE;

Vincent Reymond, Antony, FR;

Norbert Huhn, Herzogenrath, DE;

Assignee:

SAINT-GOBAIN GLASS FRANCE, Courbevoie, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); B32B 17/06 (2006.01); B32B 17/10 (2006.01);
U.S. Cl.
CPC ...
B32B 17/10229 (2013.01); B32B 17/10036 (2013.01); B32B 17/1011 (2013.01); B32B 17/10651 (2013.01); B32B 2307/204 (2013.01); B32B 2307/4026 (2013.01); B32B 2307/7376 (2023.05); B32B 2605/08 (2013.01);
Abstract

A glass article with solar control properties, includes a glass substrate provided with a stack of layers that includes successively from the surface of the substrate a first module Mmade of layer(s) of dielectric material, a first layer TiNincluding titanium nitride, a second module Mmade of layer(s) of dielectric material, a second layer TiNincluding titanium nitride, a third module Mmade of layer(s) of dielectric material. The total thickness the TiNand TiNlayers including titanium nitride is between 25 and 60 nm. The third module Mincludes a layer including an oxide or oxynitride of silicon having a thickness greater than 10 nm. An interlayer IL of titanium, aluminum, silicon, or an alloy thereof, or of a nickel chromium alloy, is deposited between the second layer TiNand the third module M, the thickness of the interlayer IL being between 0.5 nm and 7 nm.


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