The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Oct. 29, 2019
Applicant:

Khalifa University of Science and Technology, Abu Dhabi, AE;

Inventors:

Anas Alazzam, Abu Dhabi, AE;

Heba Abunahla, Abu Dhabi, AE;

Baker Mohammad, Abu Dhabi, AE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/883 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/823 (2023.02); H10N 70/253 (2023.02);
Abstract

A planar graphene oxide (GO)-based device including multiple resistance state elements in response to an applied voltage and wherein the multiple resistance state elements mimic neural synapse behavior. The device has multiple application potentials including but not limited to non-volatile electronic memory, sensors, computing for Artificial intelligence (AI) and security. Also disclosed is method of manufacturing a memristor microdevice comprising the steps of patterning metal layer and graphene oxide or reduced graphene oxide thin films on different substrates and producing reduced graphene oxide (rGO) thin film through reduction of the graphene oxide layer. Fabricating thin films of graphene oxide and reduced graphene oxide in the microdevice from an aqueous solution of graphene oxide, results in making the process simple, cost effective, and suitable for mass production of the microdevice.


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