Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device may include first conductive lines extending in a first direction; second conductive lines extending in a second direction that intersects the first direction; memory cells disposed between the first conductive lines and the second conductive lines in a third direction perpendicular to each of the first and the second directions, each of the memory cells comprising a variable resistance pattern; first gap-fill patterns disposed between the memory cells and having first thermal conductivity; and second gap-fill patterns disposed on the first gap-fill patterns in the third direction and having second thermal conductivity lower than the first thermal conductivity, wherein an interface between each of the second gap-fill patterns and a corresponding one of the first gap-fill patterns is disposed between an upper surface and a lower surface of the variable resistance pattern.