The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
May. 31, 2023
Nikkiso Co., Ltd., Tokyo, JP;
Kazufumi Takao, Ishikawa, JP;
Cyril Pernot, Ishikawa, JP;
Nikkiso Co., Ltd., Tokyo, JP;
Abstract
A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, an electron blocking layer formed on the active layer, and a p-type semiconductor layer formed on the electron blocking layer. Pits are formed in the active layer and the electron blocking layer. A density of the pits on an upper surface of the electron blocking layer is not less than 7.0×10pits/cmand not more than 1.8×10pits/cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile