The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Oct. 25, 2019
Applicant:

University of Houston System, Houston, TX (US);

Inventors:

Venkat Selvamanickam, Houston, TX (US);

Yongkuan Li, Houston, TX (US);

Ying Gao, Mason, OH (US);

Assignee:

University of Houston System, Houston, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/169 (2025.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); H10N 60/01 (2023.01);
U.S. Cl.
CPC ...
H10F 77/169 (2025.01); C30B 25/183 (2013.01); H01L 21/02293 (2013.01); H10N 60/0632 (2023.02); H10N 60/0801 (2023.02);
Abstract

A superconductor tape and method for fabricating same are disclosed. Embodiments are directed to a superconductor tape including a substrate and a buffer stack. In one embodiment, the buffer stack includes: an Ion Beam-Assisted Deposition (IBAD) template layer above the substrate; a homo-epitaxial film of MgO or TiN above the IBAD template layer; an epitaxial film of silver above the homo-epitaxial film; and a homo-epitaxial film of LaMnO3 (LMO) above the silver epitaxial film. The superconductor tape also includes a superconductor film above the buffer stack. These and other embodiments achieve a LMO film with substantially improved texture, resulting in a superconductor structure having high critical current and significantly reduced power consumption and cost.


Find Patent Forward Citations

Loading…