The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Dec. 08, 2022
Applicant:

Cisco Technology, Inc., San Jose, CA (US);

Inventors:

Kam Yan Hon, Irvine, CA (US);

Fatemeh Rezaeifar Bayat, Mission Viejo, CA (US);

Attila Mekis, Carlsbad, CA (US);

Gianlorenzo Masini, Carlsbad, CA (US);

Assignee:

Cisco Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/221 (2025.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 30/2218 (2025.01); H10F 71/127 (2025.01);
Abstract

A photodetector includes a substrate, an absorber, a first doped region, and a second doped region. The absorber includes a first region and a second region that is more heavily doped than the first region. The first doped region is positioned on the substrate such that the first doped region contacts the second region of the absorber. A portion of the first doped region is positioned between the absorber and the substrate. The second doped region is positioned on the substrate such that the second doped region contacts the first region of the absorber rather than the second region of the absorber. A portion of the second doped region is positioned between the absorber and the substrate. The portion of the second doped region extends across a majority of a width of the absorber.


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