The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Apr. 04, 2023
Sharp Display Technology Corporation, Kameyama, JP;
Hajime Imai, Kameyama, JP;
Tohru Daitoh, Kameyama, JP;
Yoshihito Hara, Kameyama, JP;
Tetsuo Kikuchi, Kameyama, JP;
Teruyuki Ueda, Kameyama, JP;
Masaki Maeda, Kameyama, JP;
Tatsuya Kawasaki, Kameyama, JP;
Yoshiharu Hirata, Kameyama, JP;
SHARP DISPLAY TECHNOLOGY CORPORATION, Kameyama, JP;
Abstract
The active matrix substrate includes a plurality of oxide semiconductor TFTs supported by a substrate. Each of the plurality of oxide semiconductor TFTs includes an oxide semiconductor layer including a channel region, a lower electrode positioned between the oxide semiconductor layer and the substrate, and an insulating layer positioned between the oxide semiconductor layer and the lower electrode. The insulating layer has a layered structure including a lower layer, an upper layer positioned between the lower layer and the oxide semiconductor layer, and an intermediate layer positioned between the lower layer and the upper layer. The upper layer is a silicon oxide layer, the intermediate layer contains at least silicon and nitrogen, and the lower layer contains at least silicon, nitrogen, and oxygen. A hydrogen desorption amount in the lower layer is larger than a hydrogen desorption amount in the intermediate layer.