The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

May. 03, 2022
Applicant:

Mediatek Inc., Hsinchu, TW;

Inventors:

Cheng-Hua Lin, Hsinchu, TW;

Yan-Liang Ji, Hsinchu, TW;

Ching-Han Jan, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/021 (2025.01); H10D 64/015 (2025.01); H10D 64/018 (2025.01); H10D 64/259 (2025.01); H10D 64/512 (2025.01); H10D 64/01 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate having a well region and a gate structure formed over the well region of the semiconductor substrate. The semiconductor device also includes a gate spacer structure having a first spacer portion and a second spacer portion on opposite sidewalls of the gate structure. The semiconductor device also includes a source region and a drain region formed in the semiconductor substrate. The source region and a drain region are separated from the gate structure. The source region is adjacent to the first spacer portion of the gate spacer structure, and the drain region is adjacent to the second spacer portion of the gate spacer structure. The bottom width of the second spacer portion is greater than the bottom width of the first spacer portion.


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