The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jul. 03, 2023
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Seiya Hasegawa, Nisshin, JP;
Takashi Ushijima, Nisshin, JP;
Takashi Ishida, Nisshin, JP;
Shoichi Onda, Nagoya, JP;
Chiaki Sasaoka, Nagoya, JP;
Jun Kojima, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Abstract
A semiconductor device includes a gallium nitride substrate and a pattern film disposed on a front surface of the gallium nitride substrate. In the gallium nitride substrate, a Young's modulus in a first direction along the front surface is larger than a Young's modulus in a second direction along the front surface and orthogonal to the first direction. A first ratio R1 obtained by dividing a dimension of the gallium nitride substrate in the first direction by a dimension of the gallium nitride substrate in the second direction and a second ratio R2 obtained by dividing a dimension of the pattern film in the first direction by a dimension of the pattern film in the second direction satisfy a relationship of R1<R2.