The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jun. 23, 2023
Fuji Electric Co., Ltd., Kawasaki, JP;
Yasuyuki Hoshi, Matsumoto, JP;
Shingo Hayashi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device has a first semiconductor region of a first conductivity type, provided in a semiconductor substrate, spanning an active region and a termination region. A second semiconductor region of a second conductivity type is provided between a first main surface and the first semiconductor region, in the active region. A device structure having a first pn junction is provided between the first and second semiconductor regions. An outer peripheral portion of the active region is provided between the first main surface and the first semiconductor region in the active region, and constitutes a second-conductivity-type outer peripheral region that surrounds a periphery of the device structure and forms a second pn junction with the first semiconductor region. A first protective film is provided on the first main surface. The first protective film blocks light generated by a forward current passing through the first and second pn junctions.