The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jul. 16, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shinya Soneda, Tokyo, JP;

Kenji Harada, Tokyo, JP;

Kakeru Otsuka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 12/421 (2025.01); H10D 62/127 (2025.01); H10D 62/393 (2025.01);
Abstract

In plan view of an RC-IGBT, a boundary region has an occupancy rate of an n-type source layer per unit area, the occupancy rate being smaller than an occupancy rate of the n-type source layer per unit area in an IGBT region, and the boundary region has an occupancy rate of a p-type contact layer per unit area, the occupancy rate being smaller than an occupancy rate of the p-type contact layer per unit area in an IGBT region.


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