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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12507417 B1

PDFFull Text
Date of Patent:
Dec. 23, 2025

Filed:

Jun. 19, 2023

Integrated circuit device and electronic system including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Seokcheon Baek, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Morgan, Lewis & Bockius LLP

Primary Examiner:

Feifei Yeung Lopez

Int. Cl.
CPC ...
H10B 43/50 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/27 (2023.01); H10B 41/30 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 41/41 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 41/41 (2023.02); H10B 43/20 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 80/00 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

An integrated circuit device includes a first structure and a second structure stacked on the first structure. The first structure includes a first substrate, a peripheral circuit, and a first bonding pad. The second structure includes a second substrate that includes a first side and a second side, a plurality of gate electrodes disposed on the first side of the second substrate, a first cell contact plug that penetrates a first conductive pad of a first gate electrode, is electrically connected to the first gate electrode, penetrates second gate electrodes disposed above the first gate electrode, and is electrically insulated from the second gate electrodes, a first node separation structure that penetrates the second substrate and surrounds an upper part of the first cell contact plug positioned in the second substrate, and a second bonding pad bonded to the first bonding pad.

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