The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jun. 28, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Katsuaki Natori, Mie, JP;

Hiroshi Toyoda, Mie, JP;

Masayuki Kitamura, Mie, JP;

Takayuki Beppu, Mie, JP;

Koji Yamakawa, Mie, JP;

Kenichiro Toratani, Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); C23C 16/06 (2006.01); C23C 16/56 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); C23C 16/06 (2013.01); C23C 16/56 (2013.01); H01L 21/28 (2013.01);
Abstract

A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.


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Natori, Katsuaki. (2025). Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus (U.S. Patent No. 12507413). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12507413

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