The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Apr. 19, 2022
SK Hynix Inc., Gyeonggi-do, KR;
Jun Sik Kim, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
Present invention provides a method of fabricating a semiconductor device capable of improving word line interference between adjacent cells. A semiconductor device comprises: a device isolation layer defining active regions on a substrate and including a first region and a second region, the active regions being spaced apart in a first direction by the first region having a first interval and by the second region having a second interval being larger than the first interval; a gate trench extending in the first direction to cross the active regions and the first and second regions; and a buried word line gap-filling the gate trench, wherein the first region disposed below the gate trench is formed by the first insulating layer, and wherein the second region disposed below the gate trench is formed by a stack structure of the first insulating layer and a second insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile