The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Sep. 22, 2022
Applicant:

Rf360 Singapore Pte. Ltd., Singapore, SG;

Inventors:

Maximilian Schiek, Puchheim, DE;

Willi Aigner, Moosinning, DE;

Christian Ceranski, Munich, DE;

Assignee:

RF360 Singapore Pte. Ltd., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02015 (2013.01); H03H 3/02 (2013.01); H03H 9/174 (2013.01); H03H 9/175 (2013.01); H03H 2003/023 (2013.01); H03H 2003/025 (2013.01);
Abstract

A bulk acoustic wave (BAW) device comprises a layer stack including first and second electrodes, a first piezoelectric layer between the electrodes, and a second piezoelectric layer between the first piezoelectric layer and the second electrode. A polarization of a crystal structure of the second piezoelectric layer is opposite to a polarization of a crystal structure of the first piezoelectric layer to achieve higher order resonant frequencies in the BAW device by means other than merely thinning layers in the layer stack. In some examples, the BAW device is a two-terminal device and does not include a metal layer configured to be a third electrode. In some examples, the BAW device includes at least one intermediate layer between the first and second piezoelectric layers, and a total combined thickness of the at least one intermediate layer is less than 4% of a total thickness of the layer stack.


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