The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

May. 04, 2021
Applicant:

Ams-osram International Gmbh, Regensburg, DE;

Inventors:

Bruno Jentzsch, Regensburg, DE;

Hubert Halbritter, Dietfurt-Toeging, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/18 (2021.01); H01S 5/02255 (2021.01); H01S 5/026 (2006.01); H01S 5/10 (2021.01); H01S 5/183 (2006.01); H01S 5/185 (2021.01); H01S 5/343 (2006.01); H01S 5/42 (2006.01); G01S 7/481 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18 (2013.01); H01S 5/02255 (2021.01); H01S 5/026 (2013.01); H01S 5/1021 (2013.01); H01S 5/18305 (2013.01); H01S 5/185 (2021.01); H01S 5/3432 (2013.01); H01S 5/34326 (2013.01); H01S 5/423 (2013.01); G01S 7/4814 (2013.01);
Abstract

A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement. The vertical laser element is arranged above the first semiconductor layer arrangement on the side of the first main surface in a beam path of electromagnetic radiation reflected at one of the lateral boundaries of the first semiconductor layer arrangement ().


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