The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Sep. 02, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Rei Hashimoto, Edogawa, JP;

Tsutomu Kakuno, Fujisawa, JP;

Kei Kaneko, Yokohama, JP;

Shinji Saito, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/042 (2006.01); H01S 5/187 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/04254 (2019.08); H01S 5/187 (2013.01); H01S 5/3402 (2013.01); H01S 5/34306 (2013.01); H01S 5/34313 (2013.01); H01S 5/04252 (2019.08); H01S 2301/176 (2013.01);
Abstract

A surface light-emission type semiconductor light-emitting device includes a first semiconductor layer; a light-emitting layer provided on the first semiconductor layer; a second semiconductor layer provided on the light-emitting layer; an uneven structure provided on the second semiconductor layer, the uneven structure including a protrusion and a recess next to the protrusion; a first metal layer covering the uneven structure; and a second metal layer provided between the uneven structure and the first metal layer. The second metal layer is provided on one of a bottom surface of the recess, an upper surface of the protrusion, or a side surface of the protrusion. The second metal layer has a reflectance for light radiated from the light-emitting layer, which is less than a reflectance of the first metal layer for the light.


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