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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12506081 B1

PDFFull Text
Date of Patent:
Dec. 23, 2025

Filed:

Apr. 27, 2023

Semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byung Ju Kang, Suwon-si, KR;

Kwan Young Chun, Suwon-si, KR;

Ji Wook Kwon, Suwon-si, KR;

Chul Hong Park, Suwon-si, KR;

Azmat Raheel, Suwon-si, KR;

Suhyeong Choi, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Herve-Louis Y Assouman

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/481 (2013.01);
Abstract

A semiconductor device includes a substrate including a first side and a second side opposite to the first side, a first power rail and a second power rail provided on the first side of the substrate, the first power rail and the second power rail extending in a first direction and being separated in a second direction, a first active region and a second active region provided on the first side of the substrate, the first active region and the second active region being defined by an element separation film between the first power rail and the second power rail and being separated in the second direction, a power delivery network provided on the second side of the substrate, and a first power through via penetrating the element separation film and the substrate, the first power through via connecting the power delivery network and the first power rail.

Find Patent Forward Citations

Kang, Byung. (2025). Semiconductor device (U.S. Patent No. 12506081). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12506081

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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