The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Oct. 03, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Chia Che Chiang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 21/0228 (2013.01); H01L 21/02458 (2013.01); H01L 21/0337 (2013.01); H01L 21/76224 (2013.01); H01L 21/76834 (2013.01);
Abstract

The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a semiconductor layer stack on a metal layer, in which the semiconductor layer stack includes a first nitride layer, a first oxide layer, a second nitride layer, a second oxide layer, and a third nitride layer; forming a mask layer on the semiconductor layer stack, in which the mask layer includes a plurality of hollowed portions; depositing a thin silicon layer on inner walls of the hollowed portions; and forming a plurality of trenches in the semiconductor layer stack by the hollowed portions.


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Chiang, Chia. (2025). Method of manufacturing semiconductor device (U.S. Patent No. 12506033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12506033

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