The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Dec. 29, 2022
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventor:
Mohamed Boufnichel, Monnaie, FR;
Assignee:
STMICROELECTRONICS (TOURS) SAS, Tours, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 21/78 (2006.01); H10D 62/10 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/3083 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/78 (2013.01); H10D 62/102 (2025.01); H10D 62/103 (2025.01); H10D 62/104 (2025.01); H10D 8/045 (2025.01); H10D 8/422 (2025.01); H10D 62/117 (2025.01);
Abstract
The present description concerns a method of forming a cavity in a substrate comprising: the forming of an etch mask comprising, opposite the location of the cavity, a plurality of sets of openings, the ratio between the openings and the mask of each set being selected according to the desired profile of the cavity opposite the surface of the mask having the set inscribed therein; and the wet etching of the substrate through the openings.