Method of manufacturing semiconductor device using plasma to modify surface of silicon-containing films exposed in trench structure, and recording medium

Abstract

A method of manufacturing a semiconductor device includes providing a substrate processing apparatus including a substrate processing chamber having a plasma generation space and a substrate processing space, a coil provided on the plasma generation space and having an electrical length equal to an integer multiple of a wavelength of high frequency power, and a mounting table, mounting the substrate having a trench to the mounting table, the trench configured so that surfaces of silicon-containing films differing in type are exposed, while at least one of the silicon-containing films including surfaces differing in crystal orientation, supplying a process gas into the chamber, starting generation of plasma of the process gas by applying high frequency power to the coil, and modifying the surfaces by the plasma.