The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Sep. 28, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jonghyun Lee, Seongnam-si, KR;

Sungseung Lim, Yongin-si, KR;

Yoodong Yang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); G01B 17/02 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3288 (2013.01); C23C 16/4412 (2013.01); C23C 16/52 (2013.01); G01B 17/025 (2013.01); H01J 37/32834 (2013.01); C23C 16/50 (2013.01); H01J 2237/24585 (2013.01);
Abstract

Provided is a semiconductor fabrication facility including a chamber, a gas supply configured to provide reaction gas to the chamber, a plurality of vacuum pumps respectively configured to pump the reaction gas from the chamber, an exhaust apparatus that is connected to the plurality of vacuum pumps and configured to purify the reaction gas, an exhausting line between the exhaust apparatus and the plurality of vacuum pumps, a thickness detection apparatus connected to the exhausting line and configured to detect a thickness of a byproduct layer in the exhausting line, and a processor connected to the thickness detection apparatus and configured to display preventive maintenance of the exhausting line based on the thickness of the byproduct layer being greater than a threshold value.


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