The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Apr. 04, 2023
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Hyung Jin Choi, Icheon-si, KR;

Gwi Han Ko, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/3459 (2013.01);
Abstract

A memory device comprising: a memory cell array comprising multiple memory cells, and a controller configured to repeatedly perform a program loop comprising a voltage application interval and a verification interval until a program operation for cells that have been connected to a word line that have been selected as a program target reach a threshold voltage level and configured to adjust an increase in a level of a program voltage that is applied to the selected word line in the voltage application interval of a second program loop following a first program loop, based on a result of a comparison between a threshold voltage level of each of cells that have been selected as a verification target, among the cells that have been connected to the selected word line, and a pre-target level in the verification interval of the first program loop, among the program loops that are repeated.


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