Operating method of non-volatile memory device using bit flipping

Abstract

An operating method of a non-volatile memory device, includes detecting first memory cells having the erase state among memory cells connected with a first word line; detecting second memory cells having sixth or seventh program states connected with a second word line adjacent to the first word line; detecting target bit lines including one of the first memory cells and one of the second memory cells; detecting target bits, corresponding to a target bit line and the erase state, in write data which is to be programmed in third memory cells connected with a third word line adjacent to the second word line; generating flip bit position data based on the target bits; flipping the target bits of the write data to generate flipped data; and programming the flipped data and the flip bit position data in the third word line.