The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Mar. 14, 2024
Applicant:

National Central University, Taoyuan, TW;

Inventors:

Jim-Wei Wu, Taoyuan, TW;

Bo-Jun Chen, Taoyuan, TW;

Shih-Hao Chien, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/319 (2006.01);
U.S. Cl.
CPC ...
G01R 31/3191 (2013.01); G01R 31/31905 (2013.01);
Abstract

An apparatus and method for removing fixture effect are disclosed herein. The device processes the calibration scattering parameters of the 2×-Thru calibration fixture pair through a time domain algorithm. The algorithm consists of time domain gating and ringing data processing to obtain partial S-parameters corresponding to the fixtures on each side of the 2×-Thru calibration fixture pair. The resulting scattering parameters are then substituted into the Mason's gain formula together with other known calibrated scattering parameters to determine all scattering parameters corresponding to the fixture on each side. Finally, in the de-embedding method, the S-parameters of the overall structure and the S-parameters of the fixtures on each side are used to obtain the scattering parameters of the DUT, thereby removing the fixture effect caused by the test fixture pair.


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