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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12503646 B1

PDFFull Text
Date of Patent:
Dec. 23, 2025

Filed:

Mar. 08, 2022

Quantum dot device, film having multilayered structure, and electronic device

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

The Governing Council of the University of Toronto, Toronto, CA;

Inventors:

Eun Joo Jang, Suwon-si, KR;

Kwanghee Kim, Seoul, KR;

Seungjin Lee, Toronto, CA;

Ted Sargent, Toronto, CA;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO, Toronto, CA;

Attorney:

CANTOR COLBURN LLP

Primary Examiner:

Gregory D Clark

Int. Cl.
CPC ...
H01L 51/50 (2006.01); C01B 19/04 (2006.01); C01G 9/02 (2006.01); C01G 9/08 (2006.01); C09K 11/54 (2006.01); C09K 11/55 (2006.01); C09K 11/88 (2006.01); H10K 71/12 (2023.01); H10K 85/50 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); H10K 50/11 (2023.01); H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/17 (2023.01); H10K 71/40 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
C09K 11/54 (2013.01); C01B 19/04 (2013.01); C01G 9/02 (2013.01); C01G 9/08 (2013.01); C09K 11/55 (2013.01); C09K 11/883 (2013.01); H10K 71/12 (2023.02); H10K 85/50 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/64 (2013.01); C01P 2006/60 (2013.01); H10K 50/11 (2023.02); H10K 50/115 (2023.02); H10K 50/156 (2023.02); H10K 50/171 (2023.02); H10K 71/40 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02); H10K 2102/00 (2023.02);
Abstract

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

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