The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Nov. 22, 2022
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Daisuke Kaminishi, Kyoto, JP;

Martin Wilfried Heller, Kyoto, JP;

Toma Fujita, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00238 (2013.01); H01L 21/02433 (2013.01); H01L 21/02636 (2013.01); B81B 2201/0235 (2013.01);
Abstract

A MEMS sensor includes: a first substrate having a cavity partially exposed on the surface of the first substrate; an electrode of a sensor element provided on the first substrate and arranged in the cavity; a support portion provided on the first substrate and configured to support the electrode; an element isolation portion formed on the first substrate so as to cover the support portion and configured to electrically isolate the electrode and the support portion from each other; an epitaxial growth layer formed on the electrode and the element isolation portion of the first substrate; and a second substrate bonded to the first substrate and configured to cover the sensor element, wherein the epitaxial growth layer has a monocrystalline portion arranged on the electrode and a polycrystalline portion arranged on the element isolation portion.


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