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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12501838 B1

PDFFull Text
Date of Patent:
Dec. 16, 2025

Filed:

Feb. 09, 2022

Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory

Applicant:

Tdk Corporation, Tokyo, JP;

Inventor:

Tomoyuki Sasaki, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Benjamin P Sandvik

Int. Cl.
CPC ...
H10N 52/80 (2023.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H01F 10/32 (2006.01); H03B 15/00 (2006.01); H10B 61/00 (2023.01); H10D 48/40 (2025.01); H10D 84/80 (2025.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01);
U.S. Cl.
CPC ...
H10N 52/00 (2023.02); G01R 33/098 (2013.01); G11B 5/39 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 11/18 (2013.01); H01F 10/32 (2013.01); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H03B 15/00 (2013.01); H03B 15/006 (2013.01); H10B 61/00 (2023.02); H10D 48/40 (2025.01); H10D 84/80 (2025.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02); H01F 10/3286 (2013.01);
Abstract

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

Find Patent Forward Citations

Quick Actions:

Sasaki, Tomoyuki. (2025). Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory (U.S. Patent No. 12501838). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12501838

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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