The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Mar. 30, 2022
Japan Display Inc., Tokyo, JP;
Toshihiko Itoga, Tokyo, JP;
Takuo Kaitoh, Tokyo, JP;
Japan Display Inc., Tokyo, JP;
Abstract
The purpose of the present invention is to form a semiconductor device in which an active area laminated on a PZT (lead zirconate titanate (PbZrTiO) sensor having a piezoelectric effect. The main structure of the present invention is as follows. A semiconductor device having a PZT (lead zirconate titanate (PbZrTiO)) sensor including: the PZT sensor including a lower electrode formed on a glass substrate, a PZT, an upper electrode, a first inorganic insulating film covering the upper electrode, and an upper wiring formed on the first inorganic insulating film and connected to the upper electrode through a first through-hole formed in the first inorganic insulating film; in which a polyimide film is formed over the PZT sensor; a plurality of TFTs are formed on the polyimide film, and a thickness of the polyimide film is 5 μm or more.