The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Apr. 21, 2023
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jonghyun Choi, Yongin-si, KR;

Younjoon Kim, Yongin-si, KR;

Kijune Lee, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); G09G 3/3233 (2016.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); G09G 3/3233 (2013.01); H10K 59/131 (2023.02); G09G 2300/0408 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01);
Abstract

A display apparatus includes a substrate including a display area on which a display element is disposed, an emission control transistor which is disposed in the display area, includes a first semiconductor layer, and is connected to a pixel electrode of an organic light-emitting diode, a switching transistor disposed in the display area and including a second semiconductor layer, and a first initialization transistor disposed in the display area and including a third semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer each include a silicon semiconductor, the third semiconductor layer includes an oxide semiconductor, and at least one of the emission control transistor, the switching transistor, and the first initialization transistor includes a dual gate electrode.


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