The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Sep. 15, 2022
Xiamen Sanan Optoelectronics Co., Ltd., Xiamen, CN;
Su-Hui Lin, Xiamen, CN;
Yu-Chieh Huang, Xiamen, CN;
Feng Wang, Xiamen, CN;
Anhe He, Xiamen, CN;
Qing Wang, Xiamen, CN;
Xiushan Zhu, Xiamen, CN;
Kang-Wei Peng, Xiamen, CN;
Ling-Yuan Hong, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS CO., LTD., Hongtang Town, CN;
Abstract
A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 μm and that is not greater than 80 μm.