The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Nov. 17, 2022
Nichia Corporation, Anan, JP;
Hiroki Abe, Komatsushima, JP;
Ryota Funakoshi, Tokushima, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A light-emitting element includes: a first light-emitting portion includes, in order upward from a lower side, a first n-side layer, a first active layer, and a first p-side layer disposed, each made of a nitride semiconductor; an intermediate layer disposed over the first light-emitting portion and made of a nitride semiconductor including an n-type impurity; and a second light-emitting portion disposed over the intermediate layer and comprising, in order upward from a lower side, a second n-side layer, a second active layer, and a second p-side layer, each made of a nitride semiconductor. An n-type impurity concentration in the intermediate layer is greater than an n-type impurity concentration in the first n-side layer. The first p-side layer includes: a first layer including aluminum and gallium, and a second layer disposed above the first layer, including aluminum and gallium.