The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Mar. 15, 2022
Canon Kabushiki Kaisha, Tokyo, JP;
Ayman Tarek Abdelghafar, Tokyo, JP;
Kazuhiro Morimoto, Kanagawa, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An avalanche photodiode has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region being a region where charges having the same polarity as that of signal charges are treated as majority carriers. A separator provided between a first photoelectric conversion element and a second photoelectric conversion element has a trench structure. A top surface of the trench structure is positioned between a top surface of the second semiconductor region and a bottom surface of the second semiconductor region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile