The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Feb. 01, 2024
Applicant:
Sionyx, Llc, Beverly, MA (US);
Inventors:
Homayoon Haddad, Beaverton, OR (US);
Jutao Jiang, Tigard, OR (US);
Assignee:
SiOnyx, LLC, Beverly, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); B23K 26/352 (2014.01); B82Y 40/00 (2011.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); B23K 26/355 (2018.08); B82Y 40/00 (2013.01); H10F 39/014 (2025.01); H10F 39/026 (2025.01); H10F 39/199 (2025.01); H10F 39/806 (2025.01); H10F 39/8067 (2025.01); H10F 39/807 (2025.01); H10F 71/1221 (2025.01); H10F 77/122 (2025.01); H10F 77/413 (2025.01);
Abstract
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.