The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Jun. 05, 2020
Ntt, Inc., Tokyo, JP;
Yoko Ono, Musashino, JP;
Yuya Uzumaki, Musashino, JP;
Sayumi Sato, Musashino, JP;
Takeshi Komatsu, Musashino, JP;
NTT, Inc., Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor layer, which is disposed on the surface of a substrate and causing an oxidation reaction and a reduction reaction when irradiated with light, an oxidation catalyst layer, which is disposed on part of the surface of the semiconductor layer, forms along with the semiconductor layer a Schottky junction, and oxidizes an oxidation target substance, a reduction catalyst layer, which is disposed on part of the surface of the semiconductor layer where the oxidation catalyst layer is not disposed so as to be separated from the oxidation catalyst layer, forms along with the semiconductor layer an ohmic junction, and reduces a reduction target substance, and an insulation layer, which is disposed on the entirety of the surface of the semiconductor layer where none of the oxidation catalyst layer and the reduction catalyst layer is disposed so as to be in contact with the oxidation catalyst layer and the reduction catalyst layer.