The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Aug. 29, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yunjin Kim, Hwaseong-si, KR;
Ki Ho Bae, Seoul, KR;
Boun Yoon, Seoul, KR;
Ilyoung Yoon, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device may include a substrate including a first cell region, a second cell region, and a dummy region between the first and second cell regions, and conductive patterns included in the first cell region, the second cell region, and the dummy region. A first pattern density, which is defined as a density of the conductive patterns of the first cell region, may be different from a second pattern density, which is defined as a density of the conductive patterns of the second cell region. A third pattern density, which is defined as a density of the conductive patterns of the dummy region, gradually changes in a region between the first cell region and the second cell region. A top surface of the substrate may be inclined at an angle, in the dummy region.