The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Mar. 23, 2023
Ark Hdps Semiconductor Pte. Limited., Singapore, SG;
Chin-Fu Chen, Hsinchu County, TW;
Ark HDPS Semiconductor Pte. LIMITED., Singapore, SG;
Abstract
A semiconductor device includes a substrate having a first conductivity type, a well region having a second conductivity type and disposed on the substrate, a first trench and a second trench disposed in the well region. In addition, a first field plate and a first dielectric layer surrounding the first field plate are disposed in the first trench. A second field plate and a second dielectric layer surrounding the second field plate are disposed in the second trench. A first gate is disposed above the first field plate. A source electrode is disposed on a first side of the first trench, and a drain electrode is disposed on a second side of the second trench. The source electrode, the first trench, the second trench and the drain electrode are sequentially arranged along a first direction.