The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Oct. 22, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Shinichi Tabuchi, Tokyo, JP;
Yasuo Ata, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer and having impurity concentration lower than impurity concentration of the first semiconductor layer, a well region provided on an upper surface side of the second semiconductor layer in the active region, a source region provided on an upper surface side of the well region, a high concentration region provided on the upper surface side of the second semiconductor layer in the termination region and having impurity concentration higher than impurity concentration of the well region, a gate electrode provided immediately above the well region and a source electrode electrically connected to the source region and the high concentration region, wherein the first semiconductor layer has an impurity concentration of equal to or greater than 4×10cmand has a thickness of equal to or greater than 4 μm.