The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
May. 27, 2022
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Koji Okuno, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H01L 21/04 (2006.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H01L 21/049 (2013.01); H10D 62/8325 (2025.01);
Abstract
A MOSFET includes a gate electrode and an etching stopper layer formed on a field insulating film of a gate pad region, and an interlayer insulating film formed on the gate electrode and the etching stopper layer. The etching stopper layer is made from a substance having a selectivity of 5.0 or more with respect to etching of the interlayer insulating film and the field insulating film, and is provided at a position farthest from the well contact hole of the under-gate well contact region at least in the gate pad region.