The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Mar. 10, 2023
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Kevin Kyuheon Cho, Bucheon, KR;
Bongyong Lee, Seoul, KR;
Kyeongseok Park, Bucheon, KR;
Doojin Choi, Gimpo, KR;
Thomas Neyer, Munich, DE;
James Joseph Victory, Trabuco Canyon, CA (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/04 (2006.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 30/66 (2025.01); H01L 21/046 (2013.01); H10D 12/031 (2025.01); H10D 62/8325 (2025.01);
Abstract
A power device includes a silicon carbide substrate. A gate is provided on a first side of the silicon carbide substrate. A graded channel includes a first region having a first dopant concentration and a second region having a second dopant concentration, the second dopant concentration being greater than the first dopant concentration.