The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
May. 24, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Chiang-Lin Shih, New Taipei, TW;
Yu-Ting Lin, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 5/06 (2006.01); G11C 11/407 (2006.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); G11C 5/06 (2013.01); G11C 11/407 (2013.01); H10B 12/03 (2023.02); H10B 12/30 (2023.02);
Abstract
A DRAM including a silicon substrate, buried word lines, and active areas is provided. The silicon substrate has a carrier surface. The buried word lines are buried in the silicon substrate. The active areas are located on the carrier surface. The buried word lines intersect the active area. Each of the buried word lines has a first width in one of the active area, and has a second width outside the active areas, and the first width is larger than the second width. A manufacturing method of DRAM is also provided.