The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

May. 11, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kiseok Lee, Hwaseong-si, KR;

Keunnam Kim, Seongnam-si, KR;

Hui-Jung Kim, Seongnam-si, KR;

Wonsok Lee, Suwon-si, KR;

Min Hee Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/67 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/05 (2023.02); H10B 12/09 (2023.02); H10B 12/482 (2023.02); H10B 12/50 (2023.02); H10D 30/6728 (2025.01); H10D 30/6755 (2025.01); H10D 99/00 (2025.01);
Abstract

A semiconductor memory device is disclosed. The semiconductor memory device may include a bit line extending in a first direction, a word line extending in a second direction perpendicular to the first direction, a channel pattern between the bit line and the word line, the channel pattern including a horizontal channel portion, which is connected to the bit line, and a vertical channel portion, which is extended from the horizontal channel portion in a third direction perpendicular to the first and second directions, and a gate insulating pattern between the word line and the channel pattern. The horizontal channel portion of the channel pattern may be disposed parallel to a fourth direction that is inclined to the first and second directions.


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