The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Apr. 10, 2023
Nanya Technology Corporation, New Taipei, TW;
Ming-Hung Hsieh, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present disclosure relates to a memory device with a vertical field effect transistor (VFET) and a method for preparing the memory device. The memory device includes a capacitor contact disposed in a first semiconductor substrate, and a channel structure disposed over a top surface of the first semiconductor substrate. The memory device also includes a first gate structure disposed on a first sidewall of the channel structure, and a second gate structure disposed on a second sidewall of the channel structure. The second sidewall of the channel structure is opposite to the first sidewall of the channel structure. The memory device further includes a bit line contact disposed over the channel structure. The channel structure is electrically connected to a capacitor and a bit line through the capacitor contact and the bit line contact.