The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Oct. 28, 2022
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Sungjoo Lee, Seongnam-si, KR;
Hyeonje Son, Suwon-si, KR;
Haeju Choi, Suwon-si, KR;
Taeho Kang, Seoul, KR;
Chanwoo Kang, Incheon, KR;
Sungpyo Baek, Suwon-si, KR;
Hyun Ho Yoo, Suncheon-si, KR;
Jae Hyeok Ju, Changwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Abstract
Disclosed are a negative transconductance device and a multi-valued memory device using the same. The negative transconductance includes a monolithic WSesemiconductor thin film; a first doped layer disposed on a first area of the WSesemiconductor thin film; a second doped layer disposed on a second area of the WSesemiconductor thin film so as to supply holes to the second area, wherein the second area is spaced apart from the first area; a first electrode electrically connected to the first area of the WSesemiconductor thin film; a second electrode electrically connected to the second area of the WSesemiconductor thin film; and a third electrode for applying a gate voltage to the first area and the second area of the WSesemiconductor thin film, and to a third area thereof located between the first and second areas.