The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Jul. 28, 2022
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Akshitha Gadde, Ithaca, NY (US);

Wolfgang Parz, Ithaca, NY (US);

Yifan Jiang, Ithaca, NY (US);

Jason Daniel Bowker, Ithaca, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/00 (2006.01); H01S 5/042 (2006.01); H01S 5/16 (2006.01); H01S 5/22 (2006.01); H01S 5/00 (2006.01); H01S 5/10 (2021.01);
U.S. Cl.
CPC ...
H01S 5/168 (2013.01); H01S 5/0421 (2013.01); H01S 5/04254 (2019.08); H01S 5/22 (2013.01); H01S 5/0035 (2013.01); H01S 5/1039 (2013.01); H01S 2301/176 (2013.01);
Abstract

Described herein are examples of improved semiconductor lasers having improved facet reliability for operation at high power and high current without significant change in device performance. The semiconductor laser may include a first semiconductor layer, an active layer, a second semiconductor layer sequentially adjacent to each other and arranged on a substrate, and a contact layer. In one example, the improved semiconductor laser may have a conductive contact less than the length of the semiconductor laser cavity and/or a dielectric layer arranged on at least one of the end portions of the contact layer.


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