The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Dec. 28, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyoung Kim, Seoul, KR;

Kangmin Kim, Hwaseong-si, KR;

Taemin Eom, Hwaseong-si, KR;

Seungmin Lee, Seoul, KR;

Changsun Hwang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes a substrate including a cell array region and a contact region; a plurality of gate electrodes arranged on the substrate in a first direction perpendicular to an upper surface of the substrate, the plurality of gate electrodes being extending in the cell array region and the contact region; a plurality of channel structures penetrating the plurality of gate electrodes in the first direction in the cell array region; a plurality of dummy channel structures penetrating the plurality of gate electrodes in the first direction in the contact region; a plurality of cell gate contacts extending in the first direction and each electrically connected to a respective one of the plurality of gate electrodes in the contact region; and a plurality of dummy contacts extending in the first direction on the plurality of dummy channel structures.


Find Patent Forward Citations

Loading…