The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Oct. 03, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Masayuki Nishiyama, Tokyo, JP;

Rei Yoneyama, Tokyo, JP;

Naoki Yoshimatsu, Tokyo, JP;

Shintaro Araki, Tokyo, JP;

Tatsuya Kawase, Tokyo, JP;

Hiroyuki Masumoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/473 (2006.01); H01L 25/07 (2006.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 23/3107 (2013.01); H01L 23/473 (2013.01); H01L 24/32 (2013.01); H01L 24/40 (2013.01); H01L 24/73 (2013.01); H01L 25/072 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/40139 (2013.01); H01L 2224/73263 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/3512 (2013.01); H02P 27/06 (2013.01);
Abstract

A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.


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